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High frequency magnetic properties and microstructure of NiZn/Co_2Z composite ferrite material

机译:NiZn / Co_2Z复合铁氧体材料的高频磁性能和显微组织

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摘要

The NiZn(Ni_(0.4)Zn_(0.6)Fe_2O_4) spinel ferrite and Co_2Z(Ba_3Co_2Fe_(24)O_(41)) hexagonal ferrite composite materials with the various Co_2Z contents have been synthesized by the solid-state reaction method. The phases and microstructures of the sintered ceramics have been analyzed. The results show that Co_2Z grains exist as a secondary phase in composites and remarkably affect the grain size and the static and high-frequency magnetic properties. With the addition ratio of Co_2Z varying from 0 wt. % to 30 wt. %, the saturation magnetization only changes slightly and is closely related to the density of sintered composites. Meanwhile, the initial permeability decreases and the cut-off frequency expands from 7 MHz to 300 MHz. In addition, the product (μ_i - 1)f_r of composites is much larger than that of the pure NiZn spinel ferrite.
机译:通过固相反应法合成了具有不同Co_2Z含量的NiZn(Ni_(0.4)Zn_(0.6)Fe_2O_4)尖晶石铁氧体和Co_2Z(Ba_3Co_2Fe_(24)O_(41))六角形铁氧体复合材料。分析了烧结陶瓷的相和微观结构。结果表明,Co_2Z晶粒作为复合材料中的次生相存在,并且显着影响晶粒尺寸以及静态和高频磁性能。 Co_2Z的添加比例为0重量%。 %至30 wt。 %,饱和磁化强度仅略有变化,并且与烧结复合材料的密度密切相关。同时,初始磁导率降低,截止频率从7 MHz扩展到300 MHz。此外,复合材料的乘积(μ_1-1)f_r远大于纯NiZn尖晶石铁氧体的乘积。

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  • 来源
    《Journal of Applied Physics》 |2012年第2期|p.07A336.1-07A336.3|共3页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA;

    Department of Physics and Astronomy, University of Delaware, Newark, Delaware 19716, USA;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:10:29

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