机译:具有氧化物和界面态-In_(0.53)Ga_(0.47)As上的Gd_(0.25)Ga_(0.15)O_(0.6)/ Ga_2O_3的n〜+金属氧化物半导体电容器的导纳特性建模与分析
SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;
School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom;
School of Engineering, University of Glasgow, Glasgow G12 8QQ, United Kingdom;
SUPA, School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;
机译:具有氧化物和界面态的n + sup>金属氧化物半导体电容器的导纳特性建模与分析-In0.53Ga0.47As上的Gd0.25Ga0.15O0.6 / Ga2O3
机译:先栅极后栅极工艺对使用原子层沉积Al_2O_3和HfO_2氧化物的In_(0.53)Ga_(0.47)As金属氧化物半导体电容器的界面质量的影响
机译:使用分子束外延-Al_2O_3 / Ga_2O_3(Gd_2O_3)作为栅极电介质的自对准反型沟道In_(0.53)Ga_(0.47)As金属氧化物半导体场效应晶体管的dc和rf特性
机译:金属/Al_2O_3/In_(0.53)Ga_(0.47)As/InP MOSCAP特性可以转换为金属/Al_2O_3/In_(0.53)Ga_(0.47)As/InP MOSFET特性吗?
机译:InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响