...
机译:沉积在非常薄的聚酰亚胺光致取向层上的并五苯薄膜的场效应迁移率的曝光依赖性
Polymer Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;
Polymer Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan,School of Pure and Applied Sciences, University of Tsukuba, 1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;
Polymer Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan,School of Pure and Applied Sciences, University of Tsukuba, 1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;
hotovoltaic Materials Unit, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;
Polymer Materials Unit, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan,School of Pure and Applied Sciences, University of Tsukuba, 1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan;
机译:沉积在非常薄的聚酰亚胺光致取向层上的并五苯薄膜的场效应迁移率的曝光依赖性
机译:摩擦的聚酰亚胺层对并五苯薄膜晶体管场效应迁移率的影响
机译:具有三氧化钼薄层的并五苯薄膜晶体管的表观场效应迁移率改善的机理
机译:现场效应迁移率在植物聚(3-己基烯烯)薄膜场效应晶体管中的纳米结构依赖性
机译:并五苯薄膜晶体管的接触电阻和空穴迁移率。
机译:通过薄中间缓冲层在硅上沉积的优先取向BaTiO3薄膜
机译:摩擦聚酰亚胺层对五苯薄膜晶体管场效应迁移率的影响
机译:蒸发铜与气相沉积聚酰亚胺薄膜的相互作用