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ZnO coated nanospring-based chemiresistors

机译:ZnO涂层的基于纳米弹簧的化学电阻

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摘要

Chemiresistors were constructed using 3-D silica nanospring mats coated with a contiguous film of ZnO nanocrystals. Chemiresistors with an average ZnO nanocrystal radius <3 nm, or >20 nm, were found to exhibit a relative change in conductance of a factor of 50 upon exposure to a gas flow of 20% O_2 and 80% N_2 with ~500 ppm of toluene and an operational temperature of 400 ℃. Samples with an average ZnO nanocrystal radius of 15 nm were found to be the most responsive with a relative conductance change of a factor of 1000. The addition of metal nanoparticles (average radius equal to 2.4 nm) onto the surface of the ZnO nanocrystals (average radius equal to 15 nm) produced a relative change in conductance of a factor of 1500. For the optimum conditions (T = 400℃, grain size ~15 nm) well-defined spikes in conductance to explosive vapors (TNT, TATP) were obtained for 0.1 ms exposure time at ppb levels.
机译:使用涂有ZnO纳米晶体连续膜的3-D二氧化硅纳米弹簧垫构造化学电阻器。发现平均ZnO纳米晶体半径<3 nm或> 20 nm的化学电阻器在暴露于20%O_2和80%N_2的气流下(〜500 ppm甲苯)时,其电导的相对变化为50倍。工作温度为400℃。发现平均ZnO纳米晶体半径为15 nm的样品响应最强,相对电导率变化为1000倍。在ZnO纳米晶体的表面上添加金属纳米颗粒(平均半径等于2.4 nm)(平均半径等于15 nm)产生的电导率相对变化为1500。在最佳条件(T = 400℃,晶粒度〜15 nm)下,获得了对爆炸性蒸气(TNT,TATP)电导率的明确定义的峰值。在ppb级别的曝光时间为0.1 ms。

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  • 来源
    《Journal of Applied Physics》 |2012年第4期|p.044311.1-044311.8|共8页
  • 作者单位

    Department of Physics and Astronomy, Western Kentucky University, Bowling Green, Kentucky 42101, USA;

    Department of Physics and Astronomy, Western Kentucky University, Bowling Green, Kentucky 42101, USA;

    Department of Physics and Astronomy, Western Kentucky University, Bowling Green, Kentucky 42101, USA;

    Department of Physics and Astronomy, Western Kentucky University, Bowling Green, Kentucky 42101, USA;

    Department of Physics and Astronomy, Western Kentucky University, Bowling Green, Kentucky 42101, USA;

    Department of Physics, E&P Bldg, University of Idaho, Moscow, Idaho 83844-0903, USA;

    Department of Physics, E&P Bldg, University of Idaho, Moscow, Idaho 83844-0903, USA;

    Department of Physics, E&P Bldg, University of Idaho, Moscow, Idaho 83844-0903, USA;

    GoNano Technologies, 112 Sweet Ave., Moscow, Idaho 83843, USA;

    Department of Physics, E&P Bldg, University of Idaho, Moscow, Idaho 83844-0903, USA;

    ElectroOptics Research Institute and Nanotechnology Center, University of Louisville. Louisville,Kentucky 40292, USA;

    Department of Physics, E&P Bldg, University of Idaho, Moscow, Idaho 83844-0903, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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