Incorporation kinetics in mixed anion compound semiconductor alloys

摘要

We present a kinetic model predicting anion incorporation in InAsSb. Included are the effects of As desorption, Sb segregation, and Sb displacement by As, any of which may be limited by the In flux if it is comparatively larger. The model captures experimental data over a range of growth conditions for the InAsSb system using activation energies for desorption and Sb segregation found in literature. The activation energy for Sb displacement found in this work is 1.3 eV. This model is general and should be valid for other mixed anion systems, or, appropriately modified, mixed cation systems and mixed anion/cation systems such as AlInAsSb.