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Analysis and design of triple-band high-impedance surface absorber with periodic diversified impedance

机译:具有周期性分散阻抗的三频带高阻抗表面吸收器的分析与设计

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摘要

In this paper, a triple-band planar absorber with high-impedance surface (HIS) is designed and fabricated. The absorber structure is composed of polyurethane foam sandwiched between a lossy sheet of frequency selective surfaces (FSS) and a perfect electric conductor. The lossy FSS possesses different resistances in a periodic composite unit as compared with typical HIS absorber. Losses in the FSS are introduced by printing the periodic composite square ring pattern on blank stickers using various resistive inks. Physical mechanism of the HIS absorbers is analyzed by equivalent circuit model and electric field distribution studies. The proposed absorber with periodic composite units offers superimposed triple-band absorption as compared with that of the single units having single- or dual-band absorption characteristics. The reflection loss measurements show that the 90% absorption bandwidth of the HIS absorber is increased by 42% by the proposed composite periodic units.
机译:本文设计并制造了具有高阻抗表面(HIS)的三频带平面吸收器。吸收器结构由夹在有损频率选择表面(FSS)板和理想电导体之间的聚氨酯泡沫组成。与典型的HIS吸收器相比,有损耗的FSS在周期复合单元中具有不同的电阻。通过使用各种电阻性油墨在空白贴纸上印刷周期性复合方形环图案来引入FSS的损失。通过等效电路模型和电场分布研究分析了HIS吸收器的物理机理。与具有单频带或双频带吸收特性的单个单元相比,所提出的具有周期性复合单元的吸收器提供了叠加的三频带吸收。反射损耗测量结果表明,通过提出的复合周期单元,HIS吸收器的90%吸收带宽增加了42%。

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  • 来源
    《Journal of Applied Physics》 |2013年第16期|164103.1-164103.5|共5页
  • 作者单位

    National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China,Chengdu, 610054, China;

    National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China,Chengdu, 610054, China;

    National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China,Chengdu, 610054, China;

    National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China,Chengdu, 610054, China;

    National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China,Chengdu, 610054, China;

    National Engineering Research Center of Electromagnetic Radiation Control Materials, State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China,Chengdu, 610054, China;

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  • 正文语种 eng
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