机译:用于外延生长拓扑绝缘子的铁磁绝缘衬底
Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA;
Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA;
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;
Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA;
Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA;
Department of Physics and Institute for Optical Sciences, University of Toronto, Toronto, Ontario M5S 1A7, Canada;
Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA;
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;
Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA;
Department of Physics and Institute for Optical Sciences, University of Toronto, Toronto, Ontario M5S 1A7, Canada,Department of Materials Science and Engineering, 170 College Street, Toronto, Ontario M53 3E4, Canada;
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;
Department of Physics, Princeton University, Princeton, New Jersey 08544, USA;
Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA;
机译:铁磁绝缘衬底上拓扑绝缘子Bi2Se3薄膜的生长和传输特性
机译:在GaAs(111)衬底上Bi2Te3和Sb2Te3拓扑绝缘体的分子束外延生长:制造拓扑绝缘体p-n结的潜在途径
机译:拓扑绝缘子Bi
机译:掺Sn的Ge插入层对柔性衬底上铁磁Fe
机译:拓扑绝缘体与绝缘铁磁体之间的邻近效应
机译:硅衬底上非外延拓扑绝缘体引起的超低功率自旋轨道转矩磁化转换
机译:BiasTe3和sb2Te3拓扑绝缘体在Gaas(111)衬底上的分子束外延生长:制造拓扑绝缘体p-n结的潜在途径