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Thickness dependent structural, magnetic, and electronic properties of the epitaxial films of transparent conducting oxide NiCo_2O_4

机译:透明导电氧化物NiCo_2O_4的外延膜的厚度依赖性结构,磁性和电子性质

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摘要

We present the thickness dependent structural, magnetic, and transport.properties of transparent conducting spinel NiCo_2O_4 thin films on MgAl_2O_4 (001) substrates. The structural examination of the films reveals that the epitaxial stain is independent of the films' thickness. Electric and magnetic measurements show that the films are metallic with p-type conduction and ferrimagnetic down to 2 unit cells with an enhanced coercive field in the films thinner than 30 unit cells. The low-temperature resistivity data indicate that the observed resistivity minimum results from the disorder-induced quantum interference effects. Our results demonstrate that NiCo_2O_4 may provide an alternative magnetic, conducting medium for spintronics devices.
机译:我们提出了厚度依赖性的结构,磁性和transport.properties MgAl_2O_4(001)衬底上的透明导电尖晶石NiCo_2O_4薄膜。薄膜的结构检查表明,外延污渍与薄膜的厚度无关。电磁测量表明,该薄膜是具有p型导电性的金属薄膜,亚铁磁性低至2个晶胞,且比30个晶胞薄的薄膜中的矫顽场增强。低温电阻率数据表明,观察到的最小电阻率是由无序引起的量子干涉效应产生的。我们的结果表明,NiCo_2O_4可以为自旋电子器件提供替代的磁性导电介质。

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  • 来源
    《Journal of Applied Physics》 |2013年第10期|103704.1-103704.4|共4页
  • 作者单位

    Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;

    Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;

    Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;

    Department of Physics and Advanced Materials Research Institute (AMRI), University of New Orleans,Louisiana 70148, USA;

    Corporate R&D Institute, Samsung Electro-Mechanics, 150 Maeyeong-ro, Suwon, Gyunggido 443-743,South Korea;

    Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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