机译:透明导电氧化物NiCo_2O_4的外延膜的厚度依赖性结构,磁性和电子性质
Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;
Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;
Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;
Department of Physics and Advanced Materials Research Institute (AMRI), University of New Orleans,Louisiana 70148, USA;
Corporate R&D Institute, Samsung Electro-Mechanics, 150 Maeyeong-ro, Suwon, Gyunggido 443-743,South Korea;
Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118, USA;
机译:透明导电氧化物NiCo2O4外延膜的厚度依赖性结构,磁性和电子性质
机译:调整透明氧化物导体的性能掺杂离子尺寸和电子结构对基于CdO的透明导电氧化物的影响MOCVD生长的Ga和In掺杂CdO薄膜
机译:外延应变和厚度依赖性结构,电气和磁性的La(0.67)Sr(0.33)MnO(3)膜
机译:外延ND_(0.50)SR_(0.50)MNO_3薄膜的厚度依赖性结构,磁性和磁传输性能
机译:镉-铟-锡-氧化物体系中块状和薄膜透明导电氧化物的结构,电学和光学特性。
机译:紫外透明Ga2O3 /(Ga1-xFex)2O3多层薄膜的外延生长和磁性
机译:外延La0.7sr0.3CoO3薄膜的厚度依赖性磁和电传输特性