A generalized lumped element modeling of electrically and magnetically dual-tunable microwave magnetoelectric resonators

摘要

According to the microwave transmission principle and the mechanism of ferromagnetic resonance (FMR), a generalized lumped element modeling for magnetoelectric tunable resonators based on the inverse magnetoelectric effect is established taking the impact of equivalent factors of piezoelectric layer into consideration. The lumped element modeling is used to analyze the electrically and magnetically dual-tunable FMR frequency drift of the magnetoelectric tunable resonator; the prediction results have a good agreement with the experimental results and the electromagnetic simulation results in quality and quantity. On this basis, this lumped element modeling is used to predict the effect of the applied electric field, the microstrip's width, the substrate's thickness, and the size of ferrite-piezoelectric layered structure on the ferromagnetic resonance. The results show that with the increase of applied electric field, the values of equivalent resistance R, inductor L, and turns ratio n increase slightly, while the value of C decreases slightly, the FMR frequency f positively shifts; with the increase of the microstrip's width and substrate's thickness, the values of equivalent resistance R, inductor L, and turns ratio n decrease, while the value of C increases, the FMR bandwidth becomes narrower, and the ferromagnetic resonance attenuation becomes stronger at the same time. When the applied electric field is determined, with the increase of the length or thickness of layered structure, the FMR frequency shifts forward, the FMR peak point decreases first and then increases; with the width of layered structure increases, the FMR frequency of the resonator shifts backward, the FMR peak point decreases first and then increases.