Stress-mediated magnetoelectric memory effect with uni-axial TbCo_2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

摘要

We present here the implementation of a magnetoelectric memory with a voltage driven writing method using a ferroelectric relaxor substrate. The memory point consists of a magnetoelastic element in which two orthogonal stable magnetic states are defined by combining uni-axial anisotropy together with a magnetic polarization in the hard axis direction. Using a ferroelectric relaxor substrate, an anisotropic stress is created in the magnetic element when applying a voltage across electrodes. Because of the inverse magnetostrictive effect, the effective anisotropy of the magnetic element is controlled by the applied voltage and used to switch magnetization from one state to the other.