Interference lithography for metal nanopattern fabrication assisted by surface plasmon polaritons reflecting image

摘要

An interference lithography technique by surface-polasmon-polaritons reflecting image is suggested for fabricating large-area metal nanopatterns in this paper. This device is designed by an attenuated total reflection mode. Enhanced interference light field is formed in the resist layer coated on any thickness metal film, which will provide a nanomask on the metal film after development. If the chemical or physical etch methods are employed, the nanomask pattern can be transferred into the metal film. Calculated and analyzed results illuminate that the incident angle, the polymer interlayer thickness, and the resist layer thickness can provide large tolerances in fabrication.