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Relaxor ferro- and paraelectricity in anisotropically strained SrTiO_3 films

机译:各向异性应变SrTiO_3薄膜中的弛豫铁电和顺电

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摘要

The ferroelectric properties of anisotropically strained SrTiO_3 films are analyzed by detailed measurements of the complex dielectric constant as function of temperature, frequency, bias voltage, and electric field direction. At low temperatures, strain induces a relaxor-ferroelectric phase that persists up to room temperature. The transition temperature and characteristic parameters (e.g., Curie temperature, static freezing temperature, degree of diffuseness of the phase transition, activation energy) of the relaxor phase depend strongly on the orientation of the electric field and, therefore, on the amount of structural strain in the given electric field direction. Also above the ferroelectric transition temperature, a relaxation of the permittivity is visible, i.e., the strain causes a relaxor-paraelectric behavior. Only at high enough temperatures, the relaxation time constant tends to zero and the "classical" dielectric state is obtained. Frequency and time dependent relaxation experiments demonstrate an extremely large distribution of the relaxation rates in both relaxor states (ferroelectric and paraelectric), which is indicative for the large distribution in the mobility of polar SrTiO_3 regions with randomly distributed directions of dipole moments in the film. The large distribution might be taken as an indication for a large distribution in size and orientation of nanosize domains in the anisotropically strained SrTiO_3 film.
机译:通过详细测量复介电常数随温度,频率,偏置电压和电场方向的变化,分析了各向异性应变SrTiO_3薄膜的铁电性能。在低温下,应变会引起弛豫铁电相,并持续到室温。弛豫相的转变温度和特征参数(例如居里温度,静态冻结温度,相转变的扩散程度,活化能)在很大程度上取决于电场的方向,因此取决于结构应变的量在给定的电场方向上。同样在铁电转变温度以上,介电常数的松弛是可见的,即,应变引起弛豫-顺电行为。仅在足够高的温度下,弛豫时间常数趋于零,并且获得“经典”介电态。频率和时间相关的弛豫实验表明,弛豫率在两种弛豫态(铁电和顺电状态)中的分布非常大,这表明极性SrTiO_3区域迁移率中的分布很大,偶极矩在薄膜中的分布方向随机。较大的分布可能被认为是各向异性应变的SrTiO_3薄膜中纳米尺寸域尺寸和取向的较大分布的指示。

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  • 来源
    《Journal of Applied Physics》 |2013年第16期|164103.1-164103.8|共8页
  • 作者单位

    Peter Gruenberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, D-52425 Juelich, Germany;

    Peter Gruenberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, D-52425 Juelich, Germany;

    Peter Gruenberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, D-52425 Juelich, Germany;

    Peter Gruenberg Institute (PGI) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, D-52425 Juelich, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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