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Length dependence of carbon-doped BN nanowires: A-D Rectification and a route to potential molecular devices

机译:碳掺杂BN纳米线的长度依赖性:A-D整流和通往潜在分子装置的途径

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摘要

Based on the first-principles approach, electronic transport properties of different lengths of carbon-doped boron-nitrogen nanowires, capped with two thiols as end groups connected to Au electrodes surfaces, are investigated. The results show that rectifying performance and negative differential resistance (NDR) behaviors can be enhanced obviously by increasing the length. Analysis of Miilliken population, transmission spectra, evolutions of frontier orbitals and molecular projected self-consistent Hamiltonian of molecular orbital indicate that electronic transmission strength, charge transfer and distributions of molecular states change are the intrinsic origin of these rectifying performances and NDR behaviors.
机译:基于第一原理方法,研究了不同长度的碳掺杂的硼氮纳米线的电子输运性质,该碳掺杂的硼氮纳米线以两个硫醇作为端基连接到Au电极表面。结果表明,通过增加长度,整流性能和负差分电阻(NDR)行为可以得到明显增强。对Miilliken种群,传输光谱,前沿轨道的演变以及分子投射的分子轨道自洽哈密顿量的分析表明,电子传输强度,电荷转移和分子态变化的分布是这些整流性能和NDR行为的内在根源。

著录项

  • 来源
    《Journal of Applied Physics》 |2013年第5期|054305.1-054305.6|共6页
  • 作者

    M.Qiu; K. M. Liew;

  • 作者单位

    Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong,School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114, People's Republic of China;

    Department of Civil and Architectural Engineering, City University of Hong Kong, Kowloon, Hong Kong;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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