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首页> 外文期刊>Journal of Applied Physics >Stable finite element method of eight-band k·p model without spurious solutions and numerical study of interfaces in heterostructures
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Stable finite element method of eight-band k·p model without spurious solutions and numerical study of interfaces in heterostructures

机译:无杂散解的八频带k·p模型稳定有限元方法及异质结构界面数值研究

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摘要

A Lagrange-Hermite finite element method for the eight-band k·p model is developed. We demonstrate that besides the incompletion of k·p basis functions, the ill representation of first-order derivatives can also bend the conduction band structure down and lead to the highly oscillatory solutions. Our method simultaneously solves these two problems and achieves robust stability and high accuracy in real-space numerical calculation. The more physical asymmetric operator ordering is employed and the connection problem in abrupt interface is resolved by using an approximately abrupt interface. The situation of smooth interface used to explain the discrepancies between experiment and simulation of abrupt interface is also calculated by our method, and the result suggests that the influence of the interface smoothing should be considered in the short period superlattices or quantum structures of the narrow well.
机译:建立了八波段k·p模型的Lagrange-Hermite有限元方法。我们证明,除了k·p基函数不完整之外,一阶导数的不正确表示还可以使导带结构向下弯曲并导致高度振荡的解。我们的方法同时解决了这两个问题,并且在实空间数值计算中实现了鲁棒的稳定性和高精度。采用更加物理的不对称算子排序,并通过使用近似突变的接口来解决突变接口中的连接问题。我们的方法还计算了用于解释突变界面的实验与模拟差异的光滑界面的情况,结果表明,在窄阱的短周期超晶格或量子结构中应考虑界面光滑的影响。

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  • 来源
    《Journal of Applied Physics 》 |2014年第23期| 235702.1-235702.10| 共10页
  • 作者单位

    Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

    Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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