机译:与InP封端和未封端的n〜+ -In_(0.53)Ga_(0.47)As的极低电阻合金化Ni基欧姆接触
Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;
Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;
Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;
SEMATECH, 257 Fuller Road, Suite 2200, Albany, New York 12203, USA;
Department of Materials Science and Engineering and Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA;
机译:与InP封端和未封端的n + sup> -In
机译:In_(0.53)Ga_(0.47)Bi_xAs_(1-x)合金中E_0和E_0 +△_(SO)跃迁的非接触电反射率研究
机译:具有超低源极/漏极电阻的无注入In_(0.53)Ga_(0.47)As量子阱金属绝缘体半导体场效应晶体管的实验演示
机译:研究合金化和非合金欧姆接触掺杂通道IN_(0.8)GA_(0.2)P / IN_(0.53)GA_(0.47),AS / INP HFET,具有超过170GHz的f_t和f_(max)
机译:与n-GaAs和n-In(0.53)Ga(0.47)As的欧姆接触:一种热力学方法。
机译:超低接触电阻的黑色磷场效应晶体管中的掺锗金属欧姆接触
机译:InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响
机译:使用渐变InGaas帽层的Gaas具有良好形态的非合金和合金低电阻欧姆接触