Contactless electroref lectance study of E_0 and E_0 + △_(SO) transitions in In_(0.53)Ga_(0.47)Bi_xAs_(1-x) alloys

R. Kudrawiec; J. Kopaczek; J. Misiewicz; J. P. Petropoulos; Y. Zhong; J. M. O. Zide

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Contactless electroref lectance study of E_0 and E_0 + △_(SO) transitions in In_(0.53)Ga_(0.47)Bi_xAs_(1-x) alloys

机译：In_（0.53）Ga_（0.47）Bi_xAs_（1-x）合金中E_0和E_0 +△_（SO）跃迁的非接触电反射率研究

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Energies of E_0 and E_0 + △_(SO) transitions in In_(0.53)Ga_(0.47)Bi_xAs_(1-x) alloys with 0

机译：通过室温下非接触电反射光谱法研究了0

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来源
《Applied Physics Letters》 |2011年第25期|p.251906.1-251906.3|共3页
作者
R. Kudrawiec; J. Kopaczek; J. Misiewicz; J. P. Petropoulos; Y. Zhong; J. M. O. Zide;
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作者单位

Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;

Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;

Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;

Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, USA;

Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;

Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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入库时间 2022-08-18 03:18:22

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1. Temperature dependence of E_0 and E_0 + △_(so) transitions in In_(0.53)Ga_(0.47)Bi_xAs_(1-x) alloys studied by photoreflectance [J] . R. Kudrawiec, J. Kopaczek, J. Misiewicz, Journal of Applied Physics . 2012,第11期

机译：通过光反射研究In_（0.53）Ga_（0.47）Bi_xAs_（1-x）合金中E_0和E_0 +△_（so）转变的温度依赖性
2. Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In_(0.53)Ga_(0.47)As/In_(0.53)Ga_(0.23)Al_(0.24)As quantum well and InAs quantum dashes [J] . R. Kudrawiec, G. Sek, M. Motyka, Journal of Applied Physics . 2010,第8期

机译：In_（0.53）Ga_（0.47）As / In_（0.53）Ga_（0.23）Al_（0.24）As量子阱和InAs量子破折线组成的隧道注入结构中光学跃迁的非接触电反射
3. Design and properties of planar-type tunnel FETs using In_(0.53)Ga_(0.47)As/In_xGa_(1-x)As/In_(0.53)Ga_(0.47)As quantum well [J] . Ahn Daehwan, Ji Sangmin, Takenaka Mitsuru, Journal of Applied Physics . 2017,第13期

机译：使用In_（0.53）Ga_（0.47）As / In_xGa_（1-x）As / In_（0.53）Ga_（0.47）As量子阱的平面型隧道FET的设计和性能
4. Study of Alloyed and Non-Alloyed Ohmic Contact Doped-Channel In_(0.8)Ga_(0.2)P/In_(0.53)Ga_(0.47)As/InP HFETs with f_T and f_(max) over 170GHz [C] . Z. Tang, H. Hsia, H. C. Kuo, International symposium on compound semiconductors . 2000

机译：研究合金化和非合金欧姆接触掺杂通道IN_（0.8）GA_（0.2）P / IN_（0.53）GA_（0.47），AS / INP HFET，具有超过170GHz的f_t和f_（max）
5. Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures [O] . Lin, Yiping, Koga, Takaaki, Nitta, Junsaku 2005

机译：InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响
6. Defects in semiconductors. An optical and electrical study of silicon, Si(1-x)Ge(x) and In(0.53)Ga( 0.47)As [R] . Tilly, L 1993

机译：半导体的缺陷。硅，si（1-x）Ge（x）和In（0.53）Ga（0.47）as的光学和电学研究

Contactless electroref lectance study of E_0 and E_0 + △_(SO) transitions in In_(0.53)Ga_(0.47)Bi_xAs_(1-x) alloys

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