机译:低于25 nm的薄相变存储器件中的异质纳米级焦耳和珀耳帖效应
Deptartment of Mechanical Science & Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;
Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA;
Deptartment of Mechanical Science & Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA,Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;
机译:直接观察相变存储设备中的纳米焦耳和珀耳帖效应
机译:直接观察相变存储设备中的纳米焦耳和珀耳帖效应
机译:对相变存储设备中的异构熔化建模
机译:使用有限元建模的热电自旋转印扭矩MRAM器件中的焦耳加热和珀耳帖效应
机译:硫族化物薄膜器件中的电结构耦合:光伏和相变存储器
机译:不对称局部焦耳加热对跨Pt电极介电电泳形成的硅纳米线基器件的影响
机译:直接观察纳米级焦耳和珀耳帖相位效应 改变记忆设备