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首页> 外文期刊>Journal of Applied Physics >Experimental observation of standing wave effect in low-pressure very-high-frequency capacitive discharges
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Experimental observation of standing wave effect in low-pressure very-high-frequency capacitive discharges

机译:低压超高频电容放电中驻波效应的实验观察

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摘要

Radial uniformity measurements of plasma density were carried out by using a floating double probe in a cylindrical (21 cm in electrode diameter) capacitive discharge reactor driven over a wide range of frequencies (27-220 MHz). At low rf power, a multiple-node structure of standing wave effect was observed at 130 MHz. The secondary density peak caused by the standing wave effect became pronounced and shifts toward the axis as the driving frequency further to increase, indicative of a much more shortened standing-wave wavelength. With increasing rf power, the secondary density peak shift toward the radial edge, namely, the standing-wave wavelength was increased, in good qualitative agreement with the previous theory and simulation results. At higher pressures and high frequencies, the rf power was primarily deposited at the periphery of the electrode, due to the fact that the waves were strongly damped as they propagated from the discharge edge into the center.
机译:等离子体密度的径向均匀性测量是通过在一个宽范围的频率(27-220 MHz)上驱动的圆柱形(电极直径为21 cm)电容放电反应器中使用浮动双探针进行的。在低射频功率下,在130 MHz处观察到驻波效应的多节点结构。由驻波效应引起的二次密度峰值变得很明显,并随着驱动频率的进一步增加而向轴方向偏移,这表明驻波波长大大缩短。随着射频功率的增加,二次密度峰值向径向边缘移动,即驻波波长增加,与先前的理论和仿真结果在质量上吻合良好。在较高的压力和较高的频率下,由于波在从放电边缘传播到中心时受到强烈衰减,因此射频功率主要沉积在电极的外围。

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  • 来源
    《Journal of Applied Physics》 |2014年第4期|043303.1-043303.5|共5页
  • 作者单位

    Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;

    Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;

    Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;

    Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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