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Bi_2O_3 liquid phase assisted and Mn substituted permeability and magnetic properties of Ni-Cu-Zn ferrite for multilayer chip inductor application

机译:多层片式电感器应用Ni_2Cu_Zn铁氧体的Bi_2O_3液相辅助和Mn替代磁导率和磁性能

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摘要

In the present work, low-temperature fired Mn_xNi_(0.5-x)Cu_(0.25)Zn_(0.25)Fe_2O_4 + Bi_2O_3 (x = 0.0 to 0.45) was synthesized by the sol-gel auto combustion technique at a temperature of 1073 K. Bi_2O_3 (with 2 wt. %) was used as a sintering aid for improving the density, microstructure and lowering the sintering temperature of Mn-Ni-Cu-Zn ferrites. Synthesized samples were investigated for their structural, magnetic, and electrical properties such as density, porosity, saturation magnetization, and permeability as a function of Mn~(2+) substitution. Permeability and saturation magnetization were found to increase with the replacement of Ni~(2+) with Mn~(2+). Bulk density of 4.5 g/cm~3 was observed for Mn-Ni-Cu-Zn ferrite with Bi_2O_3 additives which is greater than that of pure Mn-Ni-Cu-Zn ferrite (4.1 g/cm~3). Saturation magnetization of NiCuZn ferrite increased from 37 to 63 emu/g with increase in Mn~(2+) substitution. Mn substituted NiCuZn ferrite shows higher complex permeability (μ′=672) than that of the pure NiCuZn ferrite (μ′ = 433). Curie temperature determined from temperature dependent permeability data shows that Tc attains maximum value of 707 K.
机译:在本工作中,通过溶胶-凝胶自动燃烧技术在1073 K的温度下合成了低温烧制的Mn_xNi_(0.5-x)Cu_(0.25)Zn_(0.25)Fe_2O_4 + Bi_2O_3(x = 0.0至0.45)。 Bi_2O_3(具有2wt。%)被用作烧结助剂,以改善Mn-Ni-Cu-Zn铁氧体的密度,微观结构和降低烧结温度。研究了合成样品的结构,磁性和电学性质,例如密度,孔隙率,饱和磁化强度和磁导率随Mn〜(2+)的变化。发现用Mn〜(2+)代替Ni〜(2+)可提高磁导率和饱和磁化强度。含有Bi_2O_3的Mn-Ni-Cu-Zn铁氧体的堆密度为4.5 g / cm〜3,比纯Mn-Ni-Cu-Zn铁氧体的堆密度(4.1 g / cm〜3)大。 NiCuZn铁氧体的饱和磁化强度随Mn〜(2+)的增加而从37 emu / g增加到63 emu / g。 Mn取代的NiCuZn铁氧体的复磁导率(μ'= 672)比纯NiCuZn铁氧体(μ'= 433)高。根据温度相关的磁导率数据确定的居里温度表明Tc达到最大值707 K.

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  • 来源
    《Journal of Applied Physics》 |2014年第2期|17A515.1-17A515.3|共3页
  • 作者单位

    Spin Device Technology Center, Department of Information Engineering, Shinshu University, Nagano 380-8553, Japan;

    Spin Device Technology Center, Department of Information Engineering, Shinshu University, Nagano 380-8553, Japan;

    Spin Device Technology Center, Department of Information Engineering, Shinshu University, Nagano 380-8553, Japan;

    Spin Device Technology Center, Department of Information Engineering, Shinshu University, Nagano 380-8553, Japan;

    Spin Device Technology Center, Department of Information Engineering, Shinshu University, Nagano 380-8553, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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