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Downstream plasma transport and metal ionization in a high-powered pulsed-plasma magnetron

机译:大功率脉冲等离子体磁控管中的下游等离子体传输和金属电离

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摘要

Downstream plasma transport and ionization processes in a high-powered pulsed-plasma magnetron were studied. The temporal evolution and spatial distribution of electron density (n_e) and temperature (T_e) were characterized with a 3D scanning triple Langmuir probe. Plasma expanded from the racetrack region into the downstream region, where a high n_e peak was formed some time into the pulse-off period. The expansion speed and directionality towards the substrate increased with a stronger magnetic field (B), largely as a consequence of a larger potential drop in the bulk plasma region during a relatively slower sheath formation. The fraction of Cu ions in the deposition flux was measured on the substrate using a gridded energy analyzer. It increased with higher pulse voltage. With increased B field from 200 to 800 Gauss above racetrack, n_e increased but the Cu ion fraction decreased from 42% to 16%. A comprehensive model was built, including the diffusion of as-sputtered Cu flux, the Cu ionization in the entire plasma region using the mapped n_e and T_e data, and ion extraction efficiency based on the measured plasma potential (V_p) distribution. The calculations matched the measurements and indicated the main causes of lower Cu ion fractions in stronger B fields to be the lower T_e and inefficient ion extraction in a larger pre-sheath potential.
机译:研究了大功率脉冲等离子体磁控管中的下游等离子体传输和电离过程。用3D扫描三重Langmuir探针表征了电子密度(n_e)和温度(T_e)的时间演变和空间分布。等离子体从跑道区域扩展到下游区域,在脉冲关闭期间的某个时间形成了一个高n_e峰。磁场(B)越强,朝向基材的膨胀速度和方向性就越大,这主要是由于在相对较慢的护套形成过程中,体等离子体区域中的电位下降较大。使用栅状能量分析仪在基板上测量沉积通量中的铜离子含量。随着更高的脉冲电压,它增加了。随着B场从赛道上方200高斯增加到800高斯,n_e增加,但Cu离子分数从42%降低到16%。建立了一个综合模型,包括溅射的铜通量的扩散,使用映射的n_e和T_e数据在整个等离子体区域中的Cu电离,以及基于测得的等离子体电势(V_p)分布的离子提取效率。计算结果与测量结果相吻合,并指出在较强的B场中,较低的T_e和较高的鞘前电势导致离子提取效率低,是导致Cu离子分数降低的主要原因。

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  • 来源
    《Journal of Applied Physics》 |2014年第22期|223301.1-223301.9|共9页
  • 作者单位

    Center for Plasma-Materials Interactions, Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Center for Plasma-Materials Interactions, Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA,State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China;

    Center for Plasma-Materials Interactions, Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Center for Plasma-Materials Interactions, Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Center for Plasma-Materials Interactions, Department of Nuclear, Plasma, and Radiological Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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