机译:InGaAs隧道二极管,用于校准半经典和量子机械带间隧道模型
Imec, Kapeldreef 75, 3001 Heverlee, Belgium,KULeuven, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium,KULeuven, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium,Universiteit Antwerpen, 2020 Antwerpen, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium,KULeuven, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium,Universiteit Antwerpen, 2020 Antwerpen, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium,KULeuven, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Heverlee, Belgium,KULeuven, 3001 Leuven, Belgium;
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
机译:包含带隙变窄的同质结InGaAs带间隧穿二极管的全带原子建模
机译:间接半导体中带间隧穿的二维量子力学建模
机译:低功耗应用的带间隧道晶体管设计和建模。
机译:从通过单个二极管的量子隧穿中提取随机数
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景