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On the limits of uniaxial magnetic anisotropy tuning by a ripple surface pattern

机译:在单轴磁各向异性由波纹表面图案调谐的极限上

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摘要

Ion beam patterning of a nanoscale ripple surface has emerged as a versatile method of imprinting uniaxial magnetic anisotropy (UMA) on a desired in-plane direction in magnetic films. In the case of ripple patterned thick films, dipolar interactions around the top and/or bottom interfaces are generally assumed to drive this effect following Schloemann's calculations for demagnetizing fields of an ideally sinusoidal surface [E. Schloemann, J. Appl. Phys. 41, 1617 (1970)]. We have explored the validity of his predictions and the limits of ion beam sputtering to induce UMA in a ferromagnetic system where other relevant sources of magnetic anisotropy are neglected: ripple films not displaying any evidence of volume uniaxial anisotropy and where magnetocrystalline contributions average out in a fine grain polycrystal structure. To this purpose, the surface of 100 nm cobalt films grown on flat substrates has been irradiated at fixed ion energy, fixed ion fluency but different ion densities to make the ripple pattern at the top surface with wavelength A and selected, large amplitudes (ω) up to 20 nm so that stray dipolar fields are enhanced, while the residual film thickness t = 35-50 nm is sufficiently large to preserve the continuous morphology in most cases. The film-substrate interface has been studied with X-ray photoemission spectroscopy depth profiles and is found that there is a graded silicon-rich cobalt silicide, presumably formed during the film growth. This graded interface is of uncertain small thickness but the range of compositions clearly makes it a magnetically dead layer. On the other hand, the ripple surface rules both the magnetic coercivity and the uniaxial anisotropy as these are found to correlate with the pattern dimensions. Remarkably, the saturation fields in the hard axis of uniaxial continuous films are measured up to values as high as 0.80 kG and obey a linear dependence on the parameter ω~2/A/t in quantitative agreement with Schlomann's prediction for a surface anisotropy entirely ruled by dipolar interaction. The limits of UMA tuning by a ripple pattern are discussed in terms of the surface local angle with respect to the mean surface and of the onset of ripple detachment.
机译:纳米级波纹表面的离子束图案化已成为一种在磁性膜中将单轴磁各向异性(UMA)压印在所需平面内方向的通用方法。在波纹图案厚膜的情况下,通常根据Schloemann的计算(对理想正弦表面场消磁)计算出顶部和/或底部界面周围的偶极相互作用,以驱动这种效应。 Schloemann,J.Appl。物理41,1617(1970)]。我们已经探究了他的预测的正确性以及离子束溅射在铁磁系统中诱发UMA的局限性,在铁磁系统中,其他相关的磁各向异性源被忽略了:波纹膜没有显示出任何单轴各向异性的证据,并且磁晶贡献平均细晶粒多晶结构。为此,已以固定的离子能量,固定的离子流度,但不同的离子密度辐照了在平坦基板上生长的100 nm钴膜的表面,以使顶表面上的波纹图案具有波长A和选定的大振幅(ω)。最高20 nm,从而增强了杂散偶极场,而剩余膜厚度t = 35-50 nm足够大,可以在大多数情况下保持连续的形态。用X射线光电子能谱深度图研究了膜-基底界面,发现有梯度的富硅硅化钴,大概是在膜生长过程中形成的。该渐变界面的厚度不确定性很小,但是组成范围显然使其成为了一个磁死层。另一方面,由于发现波纹与表面尺寸相关,因此波纹表面既控制了矫顽磁力又抑制了单轴各向异性。值得注意的是,单轴连续膜在硬轴上的饱和场被测量到高达0.80 kG的值,并且服从对参数ω〜2 / A / t的线性依赖性,这与Schlomann对表面各向异性的完全定律的预测是一致的通过偶极相互作用。根据相对于平均表面的表面局部角度和波纹脱离的开始,讨论了由波纹图案对UMA进行调整的限制。

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  • 来源
    《Journal of Applied Physics 》 |2014年第18期| 183906.1-183906.9| 共9页
  • 作者单位

    Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha, Avda. Camilo J. Cela 10, 13071 Ciudad Real, Spain;

    Instituto de Nanociencia, Nanotecnologia y Materiales Moleculares, Universidad de Castilla-La Mancha, Campus de la Fabrica de Armas, 45071 Toledo, Spain;

    Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Cientificas, c/ Sor Juana Ines de la Cruz 3, 28049 Madrid, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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