首页> 外文期刊>Journal of Applied Physics >Grain size effect on the giant dielectric constant of CaCu_3Ti_4O_(12) nanoceramics prepared by mechanosynthesis and spark plasma sintering
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Grain size effect on the giant dielectric constant of CaCu_3Ti_4O_(12) nanoceramics prepared by mechanosynthesis and spark plasma sintering

机译:机械合成和火花等离子体烧结制备的CaCu_3Ti_4O_(12)纳米陶瓷的粒径对巨介电常数的影响

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摘要

In the present work, CaCu_3Ti_4O_(12) (CCTO) nanoceramics with different grain sizes were prepared by spark plasma sintering (SPS) at different temperatures (SPS-800, SPS-900, SPS-975, and SPS-1050) of the mechanosynthesized nano-powder. Structural and microstructural properties were studied by XRD and field-emission scanning electron microscope measurements. The grain size of CCTO nanoceramics increases from 80 nm to ~200 nm for the ceramics sintered at 800 ℃ and 975 ℃, respectively. Further increase of SPS temperature to 1050 ℃ leads to micro-sized ceramics of 2-3 μm. The electrical and dielectric properties of the investigated ceramics were studied by impedance spectroscopy. Giant dielectric constant was observed in CCTO nanoceramics. The dielectric constant increases with increasing the grain size of the nanoceramics with values of 8.3 × 10~3, 2.4 × 10~4, and 3.2 × 10~4 for SPS-800, SPS-900, and SPS-975, respectively. For the micro-sized SPS-1050 ceramics, the dielectric constant dropped to 2.14 × 10~4. The dielectric behavior is interpreted within the internal barrier layer capacitance picture due to the electrical inhomogeneity of the ceramics. Besides the resistive grain boundaries that are usually observed in CCTO ceramics, domain boundaries appear as a second source of internal layers in the current nanoceramics.
机译:在本工作中,通过在机械合成的不同温度(SPS-800,SPS-900,SPS-975和SPS-1050)下通过火花等离子体烧结(SPS)制备了具有不同晶粒尺寸的CaCu_3Ti_4O_(12)(CCTO)纳米陶瓷。纳米粉。通过XRD和场发射扫描电子显微镜测量研究了结构和微观结构特性。在800℃和975℃烧结的陶瓷中,CCTO纳米陶瓷的晶粒尺寸分别从80 nm增加到〜200 nm。 SPS温度进一步升高到1050℃会导致2-3μm的超细陶瓷。通过阻抗谱研究了所研究陶瓷的电学和介电性能。在CCTO纳米陶瓷中观察到巨大的介电常数。介电常数随纳米陶瓷晶粒尺寸的增加而增加,对于SPS-800,SPS-900和SPS-975,其介电常数分别为8.3×10〜3、2.4×10〜4和3.2×10〜4。对于SPS-1050微型陶瓷,介电常数降至2.14×10〜4。由于陶瓷的电不均匀性,在内部势垒层电容图片中解释了介电行为。除了通常在CCTO陶瓷中观察到的电阻性晶界外,畴界边界还作为当前纳米陶瓷内层的第二个来源出现。

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  • 来源
    《Journal of Applied Physics》 |2014年第15期|154103.1-154103.6|共6页
  • 作者

    Mohamad M. Ahmad; Koji Yamada;

  • 作者单位

    Department of Physics, College of Science, King Faisal University, Al-Ahsaa 31982, Saudi Arabia,Department of Physics, Faculty of Science, Assiut University in the New Valley, El-Kharga 72511, Egypt;

    Department of Applied Molecular Chemistry, College of Industrial Technology, Nihon University, Narashino, Chiba 275-8575, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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