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首页> 外文期刊>Journal of Applied Physics >Structural and dynamical magnetic response of co-sputtered Co_2FeAI heusler alloy thin films grown at different substrate temperatures
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Structural and dynamical magnetic response of co-sputtered Co_2FeAI heusler alloy thin films grown at different substrate temperatures

机译:在不同衬底温度下共溅射Co_2FeAI Heusler合金薄膜的结构和动态磁响应

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摘要

The interdependence between the dynamical magnetic response and the microstructural properties such as crystallinity, lateral crystallite size, structural ordering of the co-sputtered polycrystalline Co_2FeAl thin films on Si (100) are studied by varying the growth temperature from room temperature (RT) to 600 ℃. Frequency (7-11 GHz) dependent in-plane ferromagnetic resonance (FMR) studies were carried out by using co-planar waveguide to estimate Gilbert damping constant (a) and effective saturation magnetization (4πM_(eff)). The improvement in crystallinity, larger crystallite and particle sizes of the films are critical in obtaining films with lower α and higher (4πM_(eff)). Increase in the lattice constant with substrate temperature indicates the improvement in the structural ordering at higher temperatures. Minimum value of α is found to be 0.005 ± 0.0003 for the film deposited at 500 ℃, which is comparable to the values reported for epitaxial Co_2FeAl films. The value of (4πM_(eff)) is found to increase from 1.32 to 1.51 T with the increase in deposition temperature from RT to 500 ℃. The study also shows that the root mean square (rms) roughness linearly affects the FMR in-homogenous line broadening and the anisotropy field.
机译:通过将生长温度从室温(RT)改变为600,研究了动态磁响应与Si(100)上共溅射多晶Co_2FeAl薄膜的微结构特性(如结晶度,横向微晶尺寸,结构有序性)之间的相互依赖性。 ℃。通过使用共面波导估算吉尔伯特阻尼常数(a)和有效饱和磁化强度(4πM_(eff)),进行了与频率(7-11 GHz)相关的面内铁磁共振(FMR)研究。膜的结晶度,较大的微晶和颗粒尺寸的改善对于获得具有较低α和较高(4πM_(eff))的膜是至关重要的。晶格常数随衬底温度的增加表明在较高温度下结构顺序的改善。发现在500℃下沉积的薄膜的α最小值为0.005±0.0003,与报道的外延Co_2FeAl薄膜的值相当。随着沉积温度从室温升高到500℃,(4πM_(eff))的值从1.32 T增加到1.51T。研究还表明,均方根(rms)粗糙度线性地影响FMR均质线展宽和各向异性场。

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  • 来源
    《Journal of Applied Physics》 |2014年第13期|133916.1-133916.6|共6页
  • 作者

    Anjali Yadav; Sujeet Chaudhary;

  • 作者单位

    Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India;

    Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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