THz photomixers based on nitrogen-ion-implanted GaAs

摘要

Ultrafast photoconductors using GaAs implanted by low energy N+ ions (＜55 keV) are fabricated and characterized up to 320 GHz by means of a photomixing experiment. Around 90 μW of output power was obtained at 290 GHz with a 2-μm-diameter photoconductor based on a 160-nm-thick GaAs layer implanted with a main dose of 1.1 × 10~(12)cm~2 and a subsequent annealing at 600℃. These performances are similar to those obtained with LT-GaAs photoconductors having same electrodes geometry. Besides, it is shown that the frequency dependence of the output power is not correlated to the carrier lifetime as measured by time-resolved photoreflectance.