Near-infrared photodetectors utilizing MoS_2-based heterojunctions

摘要

Near-infrared photodetectors are developed using graphene/MoS_2 and WSe_2/MoS_2 vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W~(-1) for the graphene/MoS_2 and WSe_2/MoS_2 heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS_2 phototransistor.