Effect of surface fields on the dynamic resistance of planar HgCdTe mid-wavelength infrared photodiodes

摘要

This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of V_(FB) = -5.7 V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R_0A product and corresponding dark current calculated from the proposed model as functions of the gate voltage V_g demonstrate good consistency with the measured values. The R_0A product remarkably degenerates when V_g is far below or above V_(FB)because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7 × 10~7Ω • cm~2 around the transition between surface depletion and weak inversion when V_g ≈ -4 V, which might result from reduced generation-recombination current.