Optoelectronic properties and interband transition of La-doped BaSnO_3 transparent conducting films determined by variable temperature spectral transmittance

摘要

Perovskite-structured Ba_(1-x)La_xSnO_3 (x = 0-0.10) films have been directly grown on (0001) sapphire substrates by a sol-gel method. Optical properties and bandgap energy of the films have been investigated by transmittance spectra from 10 K to 450 K. It indicates that these films exhibit a high transmission of more than 80% in the visible region. With increasing temperature, there is a significant bandgap shrinkage of about 0.5 eV for lightly La doping (x ≤ 0.04) films. For heavily La doping concentration (x ≥ 0.06), the bandgap remains nearly stable with the temperature and La composition. This is due to the fact that the lattice expansion caused by La doping is close to the saturation for the film doped with x = 0.06. Moreover, temperature dependent conductivity behavior shows a similar pattern, which suggests that the doping concentration of La-doped BaSnO_3 (BLSO) films has a saturated state. The La introduction can modify the Sn 5s-O 2p antibonding state and the nonbonding O 2p orbital, which remarkably affect the electronic bandgap of the BLSO films.