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Relationship between Curie temperature and Brillouin function characteristics of NiCuZn ferrites

机译:NiCuZn铁氧体居里温度与布里渊函数特性的关系

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摘要

Based on Neel's two-sublattice collinear model, the relationship between Curie temperature T_c and temperature characteristics of Brillouin function for NiCuZn ferrites has been studied by nonlinear fitting calculation method. According to the tetrahedral A sites and the octahedral B sites of spinel structure model which do not only contain Fe~(3+) but also some other multiple magnetic ions (Ni~(2+) and Cu~(2+)), molecular-field coefficients ω_(aa), ω_(bb), and ω_(ab) = ω_(ba) have been calculated; furthermore, the ferrimagnetism and paramagnetism Curie temperature T_c calculation formula has been modified, respectively. The magnetic moment versus temperature T (below the Curie temperature T_c) and the reciprocal of paramagnetism magnetic susceptibility 1/x_m versus temperature T (beyond the Curie temperature T_c) have been investigated, respectively. The values of the calculated ferrimagnetism Curie temperature are very close to the values of the testing Curie temperature, and with the same zinc content t, the values of paramagnetic Curie point are all bigger than that of ferrimagnetism Curie point. With regard to different zinc contents, the fitting results are coincided well with the experimental data. With the increasing of zinc content, ω_(aa) increases constantly. However, ω_(ab) = ω_(ba) shows an opposite trend and ω_(bb) is invariant.
机译:基于Neel的两个子格共线性模型,通过非线性拟合计算方法研究了居里温度T_c与NiCuZn铁氧体布里渊函数温度特性之间的关系。根据尖晶石结构模型的四面体A位和八面体B位,它们不仅含有Fe〜(3+),还含有一些其他的多个磁性离子(Ni〜(2+)和Cu〜(2+)),已经计算出了场系数ω_(aa),ω_(bb)和ω_(ab)=ω_(ba)。另外,分别修改了亚铁磁性和顺磁性居里温度T_c的计算公式。分别研究了磁矩对温度T(居里温度T_c以下)和顺磁磁化率的倒数1 / x_m对温度T(居里温度T_c之外)的倒数。计算出的铁磁性居里温度的值非常接近测试居里温度的值,并且在锌含量相同的情况下,顺磁性居里点的值都大于铁磁性居里点的值。对于不同的锌含量,拟合结果与实验数据吻合良好。随着锌含量的增加,ω_(aa)不断增加。但是,ω_(ab)=ω_(ba)显示相反的趋势,而ω_(bb)是不变的。

著录项

  • 来源
    《Journal of Applied Physics》 |2015年第7期|073905.1-073905.6|共6页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    Department of Communication Engineering, Chengdu Technological University, Chengdu 611730, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

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  • 正文语种 eng
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