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机译:NiCuZn铁氧体居里温度与布里渊函数特性的关系
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
Department of Communication Engineering, Chengdu Technological University, Chengdu 611730, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
机译:缺铁对NiCuZn铁氧体磁性能和布里渊功能特性的影响
机译:MgO添加对低温燃烧Nicuzn铁氧体DC偏振特性的影响
机译:低Bi_2O_3掺杂模式的低温烧制NiCuZn和MgCuZn铁氧体的直流偏置叠加特性比较
机译:低烧结温度Nicuzn铁氧体的DC偏置特性
机译:使用球面波函数的频谱域方法分析电介质和铁氧体填充微带线的色散特性
机译:科学快报:高磁导率NiCuZn铁氧体的制备
机译:低温Nicuzn铁氧体的研制与多层芯片铁氧体高性能研究。