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Single-dot spectroscopy of boron and phosphorus codoped silicon quantum dots

机译:硼和磷共掺杂硅量子点的单点光谱

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摘要

Boron (B) and phosphorous (P) codoped silicon quantum dots (Si QDs) are dispersible in polar solvents without organic ligands, and exhibit size controllable photoluminescence (PL) from 0.85 to 1.85 eV due to the electronic transitions between the donor and the acceptor states. We study the PL spectra of the codoped Si QDs at room temperature and at 77 K. We show that the broad PL band of codoped colloidal Si QDs (full width at half maximum is over 400 meV) is composed of narrower PL bands of individual QDs with different PL energies. We also show that the PL linewidth of individual codoped Si QDs is almost twice as large as those of undoped Si QDs. In contrast to the significant narrowing of the PL linewidth of undoped Si QDs at low temperatures, that of codoped Si QDs is almost independent of the temperature except for a few very small QDs. These results suggest that a large number of B and P are doped in a QD and there are a number of non-identical luminescence centers in each QD.
机译:硼(B)和磷(P)共掺杂的硅量子点(Si QDs)可分散在没有有机配体的极性溶剂中,并且由于施主和受主之间的电子跃迁,其尺寸可控制的光致发光(PL)为0.85至1.85 eV。状态。我们研究了室温和77 K下共掺杂Si量子点的PL谱。我们发现,共掺杂胶体Si QD的宽PL带(半峰全宽超过400 meV)由单个QD的较窄PL带组成具有不同的PL能量。我们还表明,单个共掺杂Si QD的PL线宽几乎是未掺杂Si QD的PL线宽的两倍。与低温下未掺杂的硅量子点的PL线宽显着缩小相反,共掺杂的硅量子点的PL线宽几乎与温度无关,除了一些非常小的量子点。这些结果表明,在QD中掺杂了大量的B和P,并且每个QD中都有许多不相同的发光中心。

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  • 来源
    《Journal of Applied Physics 》 |2016年第16期| 164307.1-164307.6| 共6页
  • 作者单位

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan;

    Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Prague 2, Czechia;

    Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, CZ-121 16 Prague 2, Czechia;

    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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