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The linear magnetoresistance from surface state of the Sb_2SeTe_2 topological insulator

机译:Sb_2SeTe_2拓扑绝缘体表面状态的线性磁阻

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摘要

A non-saturating linear magnetoresistance (MR) is observed in Sb_2SeTe_2 topological insulator. The results show that the MR slope and the critical magnetic field of the linear MR are proportional to the carrier mobility and inverse mobility, respectively. These are consistent with the prediction of a model, which is constructed by Parish and Littlewood [Nature 426, 162 (2003)], in the weak mobility fluctuation condition. The Kohler plot of the magnetoresistance does not collapse onto a single curve that supports the multi-carriers scattering mechanisms.
机译:在Sb_2SeTe_2拓扑绝缘体中观察到非饱和线性磁阻(MR)。结果表明,线性MR的MR斜率和临界磁场分别与载流子迁移率和逆迁移率成正比。这些与在弱迁移率波动条件下由Parish和Littlewood [Nature 426,162(2003)]构建的模型的预测一致。磁阻的科勒图不会折叠到支持多载流子散射机制的单个曲线上。

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  • 来源
    《Journal of Applied Physics 》 |2016年第24期| 245110.1-245110.4| 共4页
  • 作者单位

    Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan;

    Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan,Taiwan Consortium of Emergent Crystalline Materials, TCECM, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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