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首页> 外文期刊>Journal of Applied Physics >Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS_2, MoSe_2, WS_2, and WSe_2
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Direct optical transitions at K- and H-point of Brillouin zone in bulk MoS_2, MoSe_2, WS_2, and WSe_2

机译:大量MoS_2,MoSe_2,WS_2和WSe_2的布里渊区K点和H点发生直接光学跃迁

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摘要

Modulated reflectance (contactless electroreflectance (CER), photoreflectance (PR), and piezoreflectance (PzR)) has been applied to study direct optical transitions in bulk MoS_2, MoSe_2, WS_2, and WSe_2. In order to interpret optical transitions observed in CER, PR, and PzR spectra, the electronic band structure for the four crystals has been calculated from the first principles within the density functional theory for various points of Brillouin zone including K and H points. It is clearly shown that the electronic band structure at H point of Brillouin zone is very symmetric and similar to the electronic band structure at K point, and therefore, direct optical transitions at H point should be expected in modulated reflectance spectra besides the direct optical transitions at the K point of Brillouin zone. This prediction is confirmed by experimental studies of the electronic band structure of MoS_2, MoSe_2, WS_2, and WSe_2 crystals by CER, PR, and PzR spectroscopy, i.e., techniques which are very sensitive to critical points of Brillouin zone. For the four crystals besides the A transition at K point, an A_H transition at H point has been observed in CER, PR, and PzR spectra a few tens of meV above the A transition. The spectral difference between A and A_H transition has been found to be in a very good agreement with theoretical predictions. The second transition at the H point of Brillouin zone (B_H transition) overlaps spectrally with the B transition at K point because of small energy differences in the valence (conduction) band positions at H and K points. Therefore, an extra resonance which could be related to the B_H transition is not resolved in modulated reflectance spectra at room temperature for the four crystals.
机译:调制反射率(非接触电反射率(CER),光反射率(PR)和压电反射率(PzR))已用于研究块状MoS_2,MoSe_2,WS_2和WSe_2中的直接光学跃迁。为了解释在CER,PR和PzR光谱中观察到的光学跃迁,根据密度泛函理论中布里渊区各个点(包括K点和H点)的第一个原理,计算了四种晶体的电子能带结构。清楚地表明,布里渊区H点的电子带结构非常对称,并且与K点的电子带结构相似,因此,除了直接的光学跃迁之外,在调制反射光谱中还应期待H点的直接光学跃迁。在布里渊区的K点。通过CER,PR和PzR光谱对MoS_2,MoSe_2,WS_2和WSe_2晶体的电子能带结构进行实验研究,即对布里渊区的临界点非常敏感的技术,证实了这一预测。对于除了K点处的A跃迁以外的四个晶体,在CER,PR和PzR光谱中已观察到H点处的A_H跃迁,比A跃迁高出数十meV。发现A和A_H跃迁之间的光谱差异与理论预测非常吻合。布里渊区H点的第二个跃迁(B_H跃迁)与K点处的B跃迁在光谱上重叠,这是因为H和K点的价(导)带位置的能量差异很小。因此,在四个晶体的室温下,在调制反射光谱中未解决可能与B_H跃迁有关的额外共振。

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  • 来源
    《Journal of Applied Physics》 |2016年第23期|235705.1-235705.8|共8页
  • 作者单位

    Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;

    Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;

    Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;

    School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA;

    School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA;

    School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA;

    Faculty of Fundamental Problems of Technology, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27,50-370 Wroclaw, Poland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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