1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

摘要

The use of 1/f noise measurements is explored for the purpose of finding faster techniques for electromigration (EM) characterization in advanced microelectronic interconnects, which also enable a better understanding of its underlying physical mechanisms. Three different applications of 1/f noise for EM characterization are explored. First, whether 1/f noise measurements during EM stress can serve as an early indicator of EM damage. Second, whether the current dependence of the noise power spectral density (PSD) can be used for a qualitative comparison of the defect concentration of different interconnects and consequently also their EM lifetime t50. Third, whether the activation energies obtained from the temperature dependence of the 1/f noise PSD correspond to the activation energies found by means of classic EM tests. In this paper, the 1/f noise technique has been used to assess and compare the EM properties of various advanced integration schemes and different materials, as they are being explored by the industry to enable advanced interconnect scaling. More concrete, different types of copper interconnects and one type of tungsten interconnect are compared. The 1/f noise measurements confirm the excellent electromigration properties of tungsten and demonstrate a dependence of the EM failure mechanism on copper grain size and distribution, where grain boundary diffusion is found to be a dominant failure mechanism.