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Phenomenological scattering-rate model for the simulation of the current density and emission power in mid-infrared quantum cascade lasers

机译:现象学散射率模型,用于模拟中红外量子级联激光器的电流密度和发射功率

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摘要

A phenomenological scattering-rate model introduced for terahertz quantum cascade lasers (QCLs) [Schrottke et al., Semicond. Sci. Technol. 25, 045025 (2010) is extended to mid-infrared (MIR) QCLs by including the energy dependence of the intersubband scattering rates for energies higher than the longitudinal optical phonon energy. This energy dependence is obtained from a phenomenological fit of the intersubband scattering rates based on published lifetimes of a number of MIR QCLs. In our approach, the total intersubband scattering rate is written as the product of the exchange integral for the squared moduli of the envelope functions and a phenomenological factor that depends only on the transition energy. Using the model to calculate scattering rates and imposing periodical boundary conditions on the current density, we find a good agreement with low-temperature data for current-voltage, power-current, and energy-photon flux characteristics for a QCL emitting at 5.2 μm.
机译:为太赫兹量子级联激光器(QCL)引入了一种现象学散射率模型[Schrottke等,Semicond。科学技术。 25,045025(2010)通过将子带间散射速率的能量依赖性包括在高于纵向光子声子能量的能量中,扩展到中红外(MIR)QCL。这种能量依赖性是根据许多MIR QCL的已发布寿命从子带间散射率的现象学拟合获得的。在我们的方法中,总的子带间散射速率写为包络函数平方模的交换积分和仅取决于跃迁能量的现象学因子的乘积。使用该模型计算散射率并将周期性边界条件强加于电流密度,我们发现对于5.2μm发射的QCL的电流-电压,功率-电流和能量-光子通量特性,与低温数据具有良好的一致性。

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  • 来源
    《Journal of Applied Physics》 |2016年第13期|134501.1-134501.6|共6页
  • 作者单位

    Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15,12489 Berlin, Germany,Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev-03028, Ukraine;

    Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15,12489 Berlin, Germany;

    Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15,12489 Berlin, Germany;

    Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15,12489 Berlin, Germany;

    Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7,10117 Berlin, Germany;

    Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7,10117 Berlin, Germany;

    Institute of Semiconductor Physics, National Academy of Sciences, pr. Nauki 45, Kiev-03028, Ukraine;

    Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15,12489 Berlin, Germany;

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