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机译:有和没有掺Si的InGaN预层生长的InGaN / GaN多量子阱结构的光学性能比较
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom;
Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS, United Kingdom;
机译:掺Si预层对InGaN / GaN单量子阱结构光学性能的影响
机译:在InGaN / GaN半体缓冲层上生长的InGaN / InGaN多量子阱,用于蓝到青色发射,具有改善的光发射和效率下降
机译:MBE和MOCVD生长的Ingan / GAN多量子阱结构的光致发光性质比较
机译:使用不同的生长参数,通过MOCVD生长的InGaN / GaN多量子阱结构的表面形态和光学性质
机译:InGaN / GaN多量子阱结构:亚微米结构,光学,电和化学性质。
机译:掺杂Si的InGaN底层对不同数量的量子阱的InGaN / GaN量子阱结构的光学性能的影响
机译:有和没有掺Si的InGaN预层生长的InGaN / GaN多量子阱结构的光学性能比较