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Magnetic and microwave properties of amorphous FeCoNbBCu thin films

机译:非晶态FeCoNbBCu薄膜的磁和微波性能

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摘要

The soft magnetic and microwave properties of amorphous FeCoNbBCu thin films with thicknesses varying from 70 nm to 450 nm have been systematically investigated. Due to the amorphous structure, the coercivity is 1.5 Oe in thicker films. The thickness-dependent microwave characteristics of the films were measured over the range 0.5-6 GHz and analyzed using the Landau-Lifshitz-Gilbert equation. Without applying magnetic field during deposition and measurement, an in-plane uniaxial anisotropy in amorphous thin films was obtained, ranging from 21 to 45 Oe. The interface interaction between substrate and film is confirmed to be the origin of the induced anisotropy, whereas the volume anisotropy contribution is more pronounced with increasing film thickness. For films possessing an in-plane uniaxial anisotropy, the shift of resonance frequency with thickness is observed and verified by the Kittel equation. The demonstration of a controllable and tunable anisotropy suggests that the FeCoNbBCu thin films have potential application as magnetic materials for Spintronics-based microwave devices.
机译:已经系统地研究了厚度从70 nm到450 nm的非晶态FeCoNbBCu薄膜的软磁和微波性能。由于非晶结构,在较厚的薄膜中矫顽力为1.5 Oe。在0.5-6 GHz的范围内测量了薄膜的厚度依赖性微波特性,并使用Landau-Lifshitz-Gilbert方程进行了分析。在沉积和测量期间不施加磁场,在非晶薄膜中获得了21至45 Oe的面内单轴各向异性。衬底和薄膜之间的界面相互作用被证实是引起各向异性的起源,而体积各向异性的贡献随着薄膜厚度的增加而更加明显。对于具有面内单轴各向异性的薄膜,观察到共振频率随厚度的变化,并通过Kittel方程进行了验证。可控制和可调谐的各向异性的证明表明,FeCoNbBCu薄膜作为基于Spintronics的微波设备的磁性材料具有潜在的应用前景。

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  • 来源
    《Journal of Applied Physics 》 |2016年第2期| 023906.1-023906.6| 共6页
  • 作者单位

    State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA;

    Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA;

    Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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