首页> 外文期刊>Journal of Applied Physics >Modeling of the electrically-tunable transistor-injected quantum cascade laser
【24h】

Modeling of the electrically-tunable transistor-injected quantum cascade laser

机译:电可调晶体管注入量子级联激光器的建模

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

A detailed quantum mechanical model that assesses the mid-infrared (MIR) and terahertz (THz) wavelength tunability of a three-terminal Transistor-Injected Quantum Cascade Laser (TI-QCL) is presented. It is shown that the device injection efficiency can be considerably enhanced by inserting an i-n layer between the QCL and the base of the transistor to match the quantum impedance between the two regions. Our calculations based on the Schrodinger equation with complex potential boundaries indicate that cascading lasing occurs when charge quasi-neutrality in the superlat-tice (SL) is achieved with an injection current density of 4.71 kA/cm~2, which is comparable to the values obtained in conventional two-terminal QCLs. Our analysis of the transition dipole moments between various quasi-bound states in the QCL SL suggests that the lasing wavelength can vary over a few microns as a function of the electric field at constant current, which indicates that the TI-QCL has potential for tunable MIR and THz sources. Finally, simultaneous multi-color lasing with wide energy separation is anticipated with application in MIR multi-gas detection.
机译:提出了详细的量子力学模型,该模型评估了三端晶体管注入量子级联激光器(TI-QCL)的中红外(MIR)和太赫兹(THz)波长可调性。结果表明,通过在QCL和晶体管的基极之间插入一个i-n层以匹配两个区域之间的量子阻抗,可以显着提高器件注入效率。我们基于具有复杂电势边界的Schrodinger方程进行的计算表明,当以4.71 kA / cm〜2的注入电流密度实现超晶格(SL)中的电荷准中性时,会发生级联激射。在常规的两端QCL中获得。我们对QCL SL中各种准结合状态之间跃迁偶极矩的分析表明,在恒定电流下,激射波长可能会随电场的变化在几微米范围内变化,这表明TI-QCL具有可调谐的潜力。 MIR和THz源。最终,可以预期的是,具有广泛能量分离的同时多色激光将应用于MIR多气体检测。

著录项

  • 来源
    《Journal of Applied Physics》 |2017年第23期|235701.1-235701.8|共8页
  • 作者单位

    Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA,School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China;

    Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

    Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA,Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号