机译:借助微波检测到的光电导率,表征具有高电阻率的带电晕的硅晶片的整体寿命
Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), Hansastrasse 27d, 80686 Munich, Germany;
Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058 Erlangen, Germany;
Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), Hansastrasse 27d, 80686 Munich, Germany;
Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), Hansastrasse 27d, 80686 Munich, Germany,Institute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany;
Fraunhofer Research Institution for Microsystems and Solid State Technologies (EMFT), Hansastrasse 27d, 80686 Munich, Germany,Institute of Physics, Universitaet der Bundeswehr Muenchen, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany;
机译:使用微波光电导衰减(mu PCD)技术对硅晶片和检测器进行复合寿命表征和绘图
机译:绝缘体上硅晶片映射在光致发光强度和微波光电导衰减寿命之间的比较
机译:微波检测的光感应电流瞬态光谱法(MD-PICTS)和微波检测的光导率(MDP)表征半导体中的非接触电缺陷
机译:基于电晕充电的Al_2O_3的批量生产研究的低温硅表面钝化
机译:高电阻率硅块体和绝缘体上硅片的表征。
机译:异丙醇浓度和刻蚀时间对低电阻晶体硅晶片湿化学各向异性刻蚀的影响
机译:用微波光电导衰减法测量大块p型siC晶片中的过剩载流子寿命