Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements

摘要

A novel method for the extraction of fixed interface charge, Q_f, and the surface recombination parameters, S_(n0) and S_(p0), from the injection-level dependent effective minority carrier lifetime measurements is presented. Unlike conventional capacitance-voltage measurements, this technique can be applied to highly doped surfaces provided the surface carrier concentration transitions into strong depletion or inversion with increased carrier injection. By simulating the injection level dependent Auger-corrected inverse lifetime curve of symmetrically passivated and diffused samples after sequential annealing and corona charging, it was revealed that Q_f, S_(n0), and S_(p0) have unique signatures. Therefore, these important electronic parameters, in some instances, can independently be resolved. Furthermore, it was shown that this non-linear lifetime behaviour is exhibited on both p-type and n-type diffused inverted surfaces, by demonstrating the approach with phosphorous diffused n~+pn~+ structures and boron diffused p~+np~+ structures passivated with aluminium oxide (AlO_x) and silicon nitride, respectively (SiN_x). The results show that the approximation of a mid-gap Shockley-Read-Hall defect level with equal capture cross sections is able to, in the samples studied in this work, reproduce the observed injection level dependent lifetime behaviour.