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首页> 外文期刊>Journal of Applied Physics >Investigation of electromigration induced by field emission current flowing through Au nanogaps in ambient air
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Investigation of electromigration induced by field emission current flowing through Au nanogaps in ambient air

机译:场发射电流在环境空气中流过金纳米间隙引起的电迁移研究

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摘要

We developed a simple and controllable nanogap fabrication method called "activation." In the activation technique, electromigration is induced by a field emission current passing through the nanogaps. Activation enables the electrical properties of Ni nanogaps in a vacuum to be controlled and is expected to be applicable to Au nanogaps even in ambient air. In this study, we investigated the activation properties of Au nanogaps in ambient air from a practical point of view. When activation was performed in ambient air, the tunnel resistance of the Au nanogaps decreased from over 100 TΩ to 3.7 MΩ as the preset current increased from 1 nA to 1.5 μA. Moreover, after activation in ambient air with a preset current of 500 nA, the barrier widths and heights of the Au nanogaps were estimated using the Simmons model to be approximately 0.5 nm and 3.3 eV, respectively. The extracted barrier height is smaller than that of 4.6 eV resulting from activation in a vacuum and much lower than the work function of bulk Au. This difference implies the presence of atmospherically derived moisture or contamination adsorbed on the nanogaps. These results suggest that activation can be utilized for Au nanogap fabrication even in ambient air.
机译:我们开发了一种简单且可控制的纳米间隙制造方法,称为“激活”。在激活技术中,电迁移是由穿过纳米间隙的场发射电流引起的。激活能够控制Ni纳米间隙在真空中的电性能,并且有望在环境空气中也适用于Au纳米间隙。在这项研究中,我们从实际的角度研究了Au纳米间隙在环境空气中的活化特性。当在环境空气中进行激活时,随着预设电流从1 nA增加到1.5μA,Au纳米间隙的隧道电阻从100TΩ以上降至3.7MΩ。此外,在环境空气中以500 nA的预设电流激活后,使用Simmons模型估计Au纳米间隙的势垒宽度和高度分别约为0.5 nm和3.3 eV。所提取的势垒高度小于在真空中的活化导致的4.6 eV的高度,并且远低于块状Au的功函。这种差异意味着存在来自大气的水分或吸附在纳米间隙上的污染物。这些结果表明,即使在环境空气中,活化也可用于金纳米间隙的制造。

著录项

  • 来源
    《Journal of Applied Physics 》 |2017年第8期| 084303.1-084303.6| 共6页
  • 作者单位

    Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo, Japan;

    Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo, Japan;

    Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo, Japan;

    Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo, Japan;

    Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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