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Curvature induced out-of-plane spin accumulation in Rashba quantum waveguides

机译:曲率引起的Rashba量子波导中的面外自旋累积

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摘要

In this work, we show that (real space) curvature in the geometry of curved waveguides with Rashba spin orbit interactions (RSOIs) can lead to out-of-plane spin accumulations. We first derive the RSOI Hamiltonian on arbitrarily curved surfaces. We then analyze the effects of curvature with two distinct methods. We first apply an adiabatic approximation on gently curved, planar waveguides lying flat on the xy plane to show that analogous to the acceleration of the charge carriers by an electric field, the change in the momentum direction of the charge carriers as they move along the waveguide leads to an out-of-plane spin accumulation. We then use the Heisenberg equations of motion to establish the relationships between spin currents and accumulations on non-planar waveguides. These relations predict the existence of out-of-plane spin accumulation on asymmetrically curved, non-planar waveguides. We finally solve for the eigenstates on such waveguides numerically and present numerical results to verify our analytic predictions.
机译:在这项工作中,我们表明具有Rashba自旋轨道相互作用(RSOI)的弯曲波导的几何形状中的(实际空间)曲率会导致面外自旋累积。我们首先在任意曲面上导出RSOI哈密顿量。然后,我们使用两种不同的方法分析曲率的影响。我们首先对平放在xy平面上的平缓弯曲的平面波导进行绝热近似,以表明类似于电场对电荷载流子的加速,当电荷载流子沿波导运动时,其动量方向的变化导致面外自旋累积。然后,我们使用海森堡运动方程式建立自旋电流与非平面波导上的累积之间的关系。这些关系预测在非对称弯曲的非平面波导上存在平面外自旋累积。最后,我们对这些波导上的本征态进行了数值求解,并给出了数值结果以验证我们的分析预测。

著录项

  • 来源
    《Journal of Applied Physics 》 |2017年第23期| 233902.1-233902.12| 共12页
  • 作者单位

    Computational Nanoelectronics and Nanodevices Laboratory, Electrical and Computer Engineering Department, National University of Singapore, Singapore;

    Computational Nanoelectronics and Nanodevices Laboratory, Electrical and Computer Engineering Department, National University of Singapore, Singapore;

    Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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