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Preparation of superhard cubic boron nitride sintered from commercially available submicron powders

机译:用市售亚微米粉末烧结制备超硬立方氮化硼

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摘要

Using submicron cubic boron nitride (cBN) powder as a starting material, polycrystalline cBN (PcBN) samples without additives were sintered from 8.0-14.0GPa at 1750°C, and their sintering behaviour and mechanical properties were investigated. Transmission electron microscopy analysis showed that high-density nanotwins could be generated from common submicron cBN grains during high pressure and high temperature treatment. The dislocation glide and (111) mechanical micro-twinning are the main mechanisms that underlie plastic deformation in the sintering process, and this contributes to the grain refinement. A refinement in the grain size (~120 nm), micro-defect (nanotwin and stacking faults), and strong covalent bonding between the grains are crucial for improving the sample mechanical properties. The PcBN sintered at 11.0GPa/1750°C possessed outstanding mechanical properties, including a high Vickers hardness (~72 GPa), fracture toughness (~12.4 MPam~(1/2)), and thermal stability (~1273 °C in air).
机译:以亚微米立方氮化硼(cBN)粉末为原料,在1750°C下从8.0-14.0GPa烧结不含添加剂的多晶cBN(PcBN)样品,并研究了其烧结行为和力学性能。透射电子显微镜分析表明,在高压和高温处理过程中,常见的亚微米cBN晶粒可产生高密度的纳米孪晶。位错滑移和(111)机械微孪晶是烧结过程中塑性变形的基础,这有助于晶粒细化。晶粒尺寸(〜120 nm)的细化,微缺陷(纳诺温和堆垛层错)以及晶粒之间的强共价键合对于改善样品的机械性能至关重要。在11.0GPa / 1750°C下烧结的PcBN具有出色的机械性能,包括高的维氏硬度(〜72 GPa),断裂韧性(〜12.4 MPam〜(1/2))和热稳定性(〜1273°C在空气中) )。

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  • 来源
    《Journal of Applied Physics》 |2017年第12期|125902.1-125902.5|共5页
  • 作者单位

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

    Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, People's Republic of China;

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