Determination of hole g-factor in InAs/lnGaAs/lnAIAs quantum wells by magneto-photoluminescence studies

摘要

A circularly polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate the Zeeman effect in InAs/lnGaAs/lnAIAs quantum wells (QWs) in the Faraday geometry. Structures with different thicknesses of the QW barriers have been studied in the magnetic field parallel and tilted with respect to the sample normal. The effective electron-hole g-fac-tor has been found by measurement of splitting of polarized magneto-PL lines. Landé factors of electrons have been calculated using the 14-band k · p method, and the g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying the tilted magnetic field.