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Secondary electron emission characteristics of TiN coatings produced by RF magnetron sputtering

机译:射频磁控溅射制备的TiN涂层的二次电子发射特性

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摘要

Multipactor, a frequent detrimental effect in space high power systems, can degrade the performance of space microwave components or even cause devastation. Surface coatings with a low secondary electron yield (SEY) have been verified to mitigate multipactor efficiently, and some literature indicates that titanium nitride (TiN) coating is an excellent multipactor suppressor due to its recognized low SEY, whereas so far, the theoretical analysis for interpreting secondary electron emission (SEE) characteristics of TiN coatings is scarce. In this work, we experimentally and theoretically investigate the SEE characteristics of TiN coatings. We fabricate seven TiN coatings at different N-2 concentrations by RF sputtering. The microscopic analysis indicates that the nanostructured TiN coatings are more likely to be formed at low N-2 concentration, inversely, the compact TiN films are more likely to be formed at high N-2 concentration. The SEE measurement shows that the nanostructured TiN coatings are more efficient to trap electrons than the compact TiN films do. Furthermore, via measuring resistivity, we find a novel regularity that the variation in true SEY largely depends on the resistivity for compact TiN films. Namely, the true SEY of compact TiN films linearly decreases as their resistivity exponentially declines. Then, we establish an equation to describe the true SEY as a function of resistivity via applying the semiconductor conductivity theory to Dionne's SEE model. The equation qualitatively interprets the experimental regularity. This work presents a probability to control the SEE level of TiN coatings by adjusting resistivity and is of significance to comprehend the SEE of semiconductors. Published by MP Publishing.
机译:在太空高功率系统中,经常会产生有害影响的Multipactor会降低太空微波组件的性能,甚至造成破坏。已经验证了具有低二次电子产率(SEY)的表面涂层可以有效地缓解多发电子,并且一些文献表明,氮化钛(TiN)涂层由于其公认的低SEY而成为一种出色的多发抑制剂,而到目前为止,对解释TiN涂层的二次电子发射(SEE)特性很少。在这项工作中,我们在实验和理论上研究了TiN涂层的SEE特性。我们通过射频溅射制备了七种不同N-2浓度的TiN涂层。显微分析表明,纳米结构的TiN涂层更容易在低N-2浓度下形成,相反,致密的TiN膜更容易在高N-2浓度下形成。 SEE测量表明,纳米结构的TiN涂层比致密的TiN膜更有效地捕获电子。此外,通过测量电阻率,我们发现了一个新颖的规律,即真实SEY的变化很大程度上取决于紧凑型TiN膜的电阻率。即,致密TiN膜的真实SEY随着其电阻率指数下降而线性减小。然后,通过将半导体电导率理论应用于Dionne的SEE模型,我们建立了一个方程式,将真实的SEY描述为电阻率的函数。该方程定性地解释了实验规律性。这项工作提出了通过调节电阻率来控制TiN涂层的SEE含量的可能性,对理解半导体的SEE具有重要意义。由MP Publishing发布。

著录项

  • 来源
    《Journal of Applied Physics》 |2018年第5期|053301.1-053301.7|共7页
  • 作者单位

    Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China;

    Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Shaanxi, Peoples R China;

    China Acad Space Technol Xian, Natl Key Lab Sci & Technol Space Microwave, Xian 710100, Shaanxi, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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