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首页> 外文期刊>Journal of Applied Physics >Impact on electronic structure of donor/acceptor blend in organic photovoltaics by decontamination of molybdenum-oxide surface
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Impact on electronic structure of donor/acceptor blend in organic photovoltaics by decontamination of molybdenum-oxide surface

机译:氧化钼表面的净化对有机光伏中供体/受体混合物电子结构的影响

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摘要

Molybdenum oxide (MoOx) is widely used as the hole-transport layer in bulk-heterojunction organic photovoltaics (BHJ-OPVs). During the fabrication of solution-processed BHJ-OPVs on vacuum-deposited MoOx film, the film must be exposed to N-2 atmosphere in a glove box, where the donor/acceptor blends are spin-coated from a mixed solution. Employing photoelectron spectroscopy, we reveal that the exposure of the MoOx film to such atmosphere contaminates the MoOx surface. Annealing the contaminated MoOx film at 160 degrees C for 5 min, prior to spin-coating the blend film, can partially remove the carbon and oxygen adsorbed on the MoOx surface during the exposure of MoOx. However, the contamination layer on the MoOx surface does not affect the energy-level alignment at the interface between MoOx and the donor/acceptor blend. Hence, significant improvement in the performance of BHJ-OPVs by mildly annealing the MoOx layer, which was previously reported, can be explained by the reduction of undesired contamination. Published by AIP Publishing.
机译:氧化钼(MoOx)被广泛用作体异质结有机光伏(BHJ-OPV)中的空穴传输层。在真空沉积的MoOx膜上进行溶液处理的BHJ-OPV的过程中,必须在手套箱中将膜暴露于N-2气氛,在其中将供体/受体混合物从混合溶液中旋涂。利用光电子能谱,我们发现MoOx膜暴露于这种气氛会污染MoOx表面。在旋涂共混膜之前,将受污染的MoOx膜在160摄氏度下退火5分钟,可以部分去除MoOx暴露过程中吸附在MoOx表面的碳和氧。但是,MoOx表面上的污染层不会影响MoOx与施主/受主混合物之间的界面处的能级对齐。因此,可以通过减少不希望有的污染来解释,通过对MoOx层进行适度退火,可以大大改善BHJ-OPV的性能。由AIP Publishing发布。

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  • 来源
    《Journal of Applied Physics 》 |2018年第20期| 205501.1-205501.6| 共6页
  • 作者单位

    Tokyo Univ Sci, Fac Sci & Technol, Dept Phys, Noda, Chiba 2788510, Japan;

    Tokyo Univ Sci, Fac Sci & Technol, Dept Phys, Noda, Chiba 2788510, Japan;

    Saitama Univ, Dept Funct Mat Sci, Saitama 3388570, Japan;

    Tokyo Univ Sci, Fac Sci & Technol, Dept Phys, Noda, Chiba 2788510, Japan;

    Tokyo Univ Sci, Fac Sci & Technol, Dept Phys, Noda, Chiba 2788510, Japan;

    Tokyo Inst Technol, Depatment Mat Sci & Engn, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Inst Technol, Depatment Mat Sci & Engn, Meguro Ku, Tokyo 1528552, Japan;

    Tokyo Univ Sci, Fac Sci & Technol, Dept Phys, Noda, Chiba 2788510, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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