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Controlled synthesis of 2D MX_2 (M = Mo, W; X = S, Se) heterostructures and alloys

机译:二维MX_2(M = Mo,W; X = S,Se)异质结构和合金的受控合成

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摘要

The advent of two-dimensional materials and van der Waals (vdW) heterostructures has been a boon for the nanoscience community, enabling the fabrication of nanostructures with atomic-scale precision, resulting in high performance opto-electronic devices. Yet, while vdW heterostructures have been widely studied, their fabrication remains rudimentary, relying upon physical stacking and ad hoc collections of recipes, rather than a rational framework. Here, we report our work on the synthesis of vdW heterostructures and monolayer alloys of MoS2-WS2 and MoSe2-WSe2 and the creation of a unifying, diagrammatic approach to heterostructure growth in these materials systems, which we call Time-Temperature-Architecture (TTA) diagrams. We demonstrate the temperature tunable synthesis of in-plane, vertical, and hybrid heterostructures, as well as monolayer alloys within the MoS2-WS2 and MoSe2-WSe2 systems. We use the TTA framework to add previously unexplored entries to this collection: the first ever single-step growth of MoSe2-WSe2 vertical heterostructures and Mo1-xWxSe2 alloys, and a new MoS2-WS2 hybrid architecture that combines the morphologies of both vertical and in-plane heterostructures. The TTA diagrams are a simple framework for vdW heterostructure and alloy growth, which we believe will be crucial, and enable further work on heterostructures and alloys of MoS2-WS2 and MoSe2-WSe2. Published by AIP Publishing.
机译:二维材料和范德华(vdW)异质结构的出现为纳米科学界带来了福音,它使得能够以原子级精度制造纳米结构,从而产生了高性能的光电器件。然而,尽管已经广泛研究了vdW异质结构,但它们的制造仍是基本的,它依赖于物理堆叠和配方的临时集合,而不是合理的框架。在这里,我们报告了有关合成Mos2-WS2和MoSe2-WSe2的vdW异质结构和单层合金的工作,并为这些材料系统中异质结构的生长建立了统一的图解方法,我们将其称为时温架构(TTA) )图表。我们展示了MoS2-WS2和MoSe2-WSe2系统内平面,垂直和混合异质结构以及单层合金的温度可调合成。我们使用TTA框架向该集合中添加了以前未开发的条目:MoSe2-WSe2垂直异质结构和Mo1-xWxSe2合金的首次单步生长,以及新的MoS2-WS2混合体系结构,结合了垂直和内部形态平面异质结构。 TTA图是vdW异质结构和合金生长的简单框架,我们认为这是至关重要的,并且可以进一步研究MoS2-WS2和MoSe2-WSe2的异质结构和合金。由AIP Publishing发布。

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  • 来源
    《Journal of Applied Physics》 |2018年第20期|204304.1-204304.9|共9页
  • 作者单位

    Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA;

    Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA;

    Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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