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机译:4H-SiC PiN二极管中单个肖克利型堆叠故障扩展的注入载流子浓度依赖性
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan,Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan,Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan,Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
Central Research Institute of Electric Power Industry, Nagasaka, Yokosuka 240-0196, Japan;
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan,Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan,Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
Fuji Electric Co., Ltd., Fuji, Hino 191-8502, Japan;
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan;
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan;
National Institute of Advanced Industrial Science and Technology, Onogawa, Tsukuba 305-8569, Japan;
Kyoto University, Kyotodaigaku-Katsura, Nishikyo 615-8510, Japan;
Central Research Institute of Electric Power Industry, Nagasaka, Yokosuka 240-0196, Japan;
机译:基面位错结构对4H-SiC p-i-n二极管正向电流退化中单个肖克利型堆叠故障扩展的影响
机译:4H-SiC p-i-n二极管正向电流退化中的界面位错和扩展的单个Shockley型堆垛层错的结构分析
机译:估算4H-SiC PiN二极管中单个Shockley堆叠故障的扩展/收缩的临界条件
机译:4H-SiC p-i-n二极管中Shockley堆垛层错扩展和收缩的温度依赖性
机译:单层和少层石墨烯自旋阀的制造和表征导致自旋弛豫长度以及自旋电压对载流子浓度的依赖性得到优化。
机译:共聚焦光致发光研究以识别基础堆叠缺陷在半极性InGaN / GaN发光二极管的光学特性中的作用
机译:4H-siC piN二极管,用于在轴外和轴上产生堆垛层错和主动降级