Capacitance Measurements on Alloyed Indium‐Germanium Junction Diodes

摘要

Donor densities in the base material of fused junction diodes, inferred from capacitance data, are used to calculate majority carrier mobilities. The dependence of capacitance on reverse bias at very low biases is found to be given by the sum of two terms, a space charge capacitance and a capacitance due to the flow of holes as given by Shockley's low level p‐n junction theory.