首页> 外文期刊>Journal of the American Chemical Society >Sensitized NIR Erbium(III) Emission in Confined Geometries: A New Strategy for Light Emitters in Telecom Applications
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Sensitized NIR Erbium(III) Emission in Confined Geometries: A New Strategy for Light Emitters in Telecom Applications

机译:受限几何结构中的敏化NIR((III)发射:电信应用中光发射器的新策略

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摘要

Infrared light sources, especially those falling into the silicantransparency windows, play an essential role in telecom technologiesnwhere signal transmission is based on silica optical fibers. In longnhaul transmission, silica remains unchallenged; however, local areannetworks, data links, and computer networks consisting ofncomplex high density circuitry require low cost alternativensolutions for signal generation and distribution. Erbium-dopednmaterials have attracted considerable attention in the past fewnyears because of their potential applications in optoelectronicsnand telecommunications. The intraconfigurational 4f-4f transitionsnbetween the first excited level (4I13/2) and the ground state (4I15/2)noccurring at ca. 1.54 μm1 corresponds in fact to the window ofnminimum attenuation in the silica-based optical fibers currently usednin optical communications.
机译:红外光源,尤其是那些落入硅透明窗口中的红外光源,在电信技术中起着至关重要的作用,在该技术中,信号传输基于硅光纤。在长途运输中,二氧化硅仍然不受挑战。但是,由复杂的高密度电路组成的局域网,数据链路和计算机网络需要用于信号生成和分配的低成本替代解决方案。掺材料由于其在光电子学和电信领域的潜在应用,在过去的几年中引起了相当大的关注。构内4f-4f在第一激发能级(4I13 / 2)和基态(4I15 / 2)之间发生转变,大约在大约2°处发生。实际上,1.54μm1对应于当前在光通信中使用的二氧化硅基光纤中的最小衰减窗口。

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