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Large Electric-Field Induced Strain in BiFeO_3 Ceramics

机译:BiFeO_3陶瓷中的大电场感应应变

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摘要

Large bipolar strain of up to 0.36% (peak-to-peak value) was measured in BiFeO_3 ceramics at low frequency (0.1 Hz) and large amplitude (140 kV/cm) of the driving field. This strain is comparable to that achievable in highly efficient morphotropic phase boundary (MPB) Pb-based perovskite ceramics, such as Pb(Zr,Ti)O_3 and Pb(Mg,Nb)O_3-PbTiO_3. The strain showed a strong dependence on the field frequency, and is probably largely associated with domain switching involving predominantly non-1800 domain walls. In addition, application of an electric field of low frequency rearranges the defects, which act as pinning centers for the domain walls. The resulting depinning of the domain walls leads to a more efficient switching and, consequently, to an increased response. The large strain reported here suggests that the domain-wall motion in BiFeO_3 may be as large as in classical lead-based ferroelectrics. We hope that this finding might further stimulate the search of new lead-free MPB compositions based on BiFeO_3.
机译:在低频(0.1 Hz)和大振幅(140 kV / cm)的驱动场中,BiFeO_3陶瓷测得的最大双极应变高达0.36%(峰对峰值)。该应变与在基于高效的变质相界(MPB)的Pb基钙钛矿陶瓷中可获得的应变相当,例如Pb(Zr,Ti)O_3和Pb(Mg,Nb)O_3-PbTiO_3。该应变显示出对场频的强烈依赖性,并且可能与主要涉及非1800域壁的域切换有关。另外,低频电场的施加重新排列了缺陷,这些缺陷充当了畴壁的钉扎中心。所产生的畴壁的钉扎会导致更有效的切换,并因此导致响应增加。这里报道的大应变表明,BiFeO_3中的畴壁运动可能与经典的基于铅的铁电材料中的畴壁运动一样大。我们希望这一发现可以进一步刺激人们寻找基于BiFeO_3的新型无铅MPB成分。

著录项

  • 来源
    《Journal of the American Ceramic Society》 |2011年第12期|p.4108-4111|共4页
  • 作者单位

    Electronic Ceramics Department, Jozef Stefan Institute, SI-1000, Ljubljana, Slovenia;

    Electronic Ceramics Department, Jozef Stefan Institute, SI-1000, Ljubljana, Slovenia;

    Ceramics Laboratory, Swiss Federal Institute of Technology - EPFL, Lausanne, 1015, Switzerland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-17 13:39:37

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